device marking LM1MA141WA = mn lm1ma142wa =mo maximum ratings (t a = 25c) rating symbol value unit reverse voltage LM1MA141WA v r 40 v dc lm1ma142wa 80 peak reverse voltage LM1MA141WA v rm 40 v dc lm1ma142wa 80 forward current single i f 100 madc dual 150 peak forward current single i fm 225 madc dual 340 peak forward surge current single i fsm (1) 500 madc dual 750 thermal characteristics rating symbol max unit power dissipation p d 150 mw junction temperature t j 150 c storage temperature t stg ?55 ~ +150 c electrical characteristics (t a = 25c) characteristic symbol condition min max unit reverse voltage leakage current LM1MA141WA i r v r = 35 v ? 0.1 adc lm1ma142wa v r = 75 v ? 0.1 forward voltage v f i f = 100 ma ? 1.2 vdc reverse breakdown voltage LM1MA141WA v r i r = 100 a 40 ? vdc lm1ma142wa 80 ? diode capacitance c d v r =0, f=1.0 mhz ? 15 pf reverse recovery time t rr (2) i f =10ma,v r =6.0v ? 10 ns r l =100 ? ,i rr =0.1 i r 1. t = 1 sec 2. t rr test circuit this common anode silicon epitaxial planar dual diode is designed for use in ultra high speed switching applications. this device is housed in the s 2 7? package which is designed for low power surface mount applications. fast t rr , < 10 ns low c d , < 15 pf common anode silicon dual switching diode sotC323 /sc C 70 sot-323 package common anode dual switching diode 40/80 v-100 ma surface mount anode 3 1 2 mn x marking symbol type no. 141wa 142wa symbol mn mo the ?x? represents a smaller alpha digit date code. the date code indicates the actual month in which the part was manufactured. cathode LM1MA141WA sot-323 3000/tape&reel device package shipping device marking and ordering information lm1ma142wa sot-323 3000/tape&reel z z we declare that the material of product compliance with rohs requirements. z LM1MA141WA lm1ma142wa 2012-1 willas electronic corp. z
a r l t r t p t 10% 90% v r t p = 2 m s t r = 0.35 ns i f t rr t i rr = 0.1 i r i f = 10 ma v r = 6 v r l = 100 w recovery time equivalent test circuit input pulse output pulse 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.75 0 v r , reverse voltage (volts) 1.5 1.25 1.0 0.75 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 1. forward voltage figure 2. reverse current figure 3. diode capacitance t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( m a) t a = 85 c t a = -40 c t a = 25 c 2012-1 willas electronic corp. common anode silicon dual switching diode LM1MA141WA lm1ma142wa
0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0.075 0.035 0.9 common anode silicon dual switching diode LM1MA141WA lm1ma142wa 2012-1 willas electronic corp. sot - 323 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15)
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